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InGaAs Photodiodes
Minimum order quantities have been established for certain products. Please review this list before contacting us with an inquiry.(PDF) Notice Regarding Minimum Order Quantities
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KP-H InGaAs Photodiode | φ0.04 | 900 | 1700 | 32GHz | VR =2V,λ=1310nm, RL=50Ω, Pin=0dBm,Small signal modulation | - | - | 0.7 | VR=2V,λ=1310nm, Pin =0dBm | CHIP | ||||
KP-H InGaAs Photodiode | φ0.04 | 900 | 1700 | 35GHz | RL=50W λ=1550nm Pin=0dBm Small signal modulation | - | - | 0.7 0.6 | λ=1310nm VR=2V λ=1550nm VR=2V | CoC | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.08 | 900 | 1700 | 2.0GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.3 | 900 | 1700 | 0.6GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.2 | 900 | 1700 | 1.0GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.08 | 900 | 1700 | 2.0GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.08 | 900 | 1700 | 2.0GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
InGaAs Photodiodes | 0.86x0.86 | 800 | 1700 | 50MHz | RL=50Ω VR=2V | - | - | 0.45 1.1 | λ=850nm VR=0V λ=1550nm VR=5V | TO-CAN | ||||
InGaAs Photodiodes | φ3 | 900 | 1700 | - | - | - | - | 0.9 1.0 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
InGaAs Photodiodes | φ1.5 | 900 | 1700 | - | - | - | - | 0.9 1.0 | λ=1310nm V R =1V λ=1550nm V R =1V | TO-CAN | ||||
InGaAs Photodiodes | 0.86x0.86 | 900 | 1700 | 30MHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.9 1.0 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-E Edge Illuminated InGaAs Photodiodes | 0.1x0.12 | 900 | 1700 | 1.5GHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.55 0.75 | λ=1310nm Pi=-10dBm VR =5V λ=1550nm Pi=-10dBm VR =5V | CHIP | ||||
KP-E Edge Illuminated InGaAs Photodiodes | 0.1x0.08 | 900 | 1700 | 1.5GHz | Pi=-10dBm VR=5V | - | - | 0.7 0.8 | λ=1310nm Pi=-10dBm VR =5V λ=1550nm Pi=-10dBm VR =5V | CHIP | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.3 | 900 | 1700 | 600MHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.9 1.0 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.3 | 900 | 1700 | 600MHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.9 1.0 | λ=1310nm VR=5V λ=1550nm VR=5V | PIGTAIL | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.3 | 900 | 1700 | 0.6GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.3 | 900 | 1700 | 600MHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.9 1.0 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | Φ0.2 | 900 | 1700 | 1.0GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | Φ0.2 | 900 | 1700 | 1.0GHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.9 1.0 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.08 | 900 | 1700 | 2.0GHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.85 0.98 | λ=1310nm VR=5V λ=1550nm VR=5V | PIGTAIL | ||||
KP-M InGaAs Photodiodes for Monitoring | φ0.08 | 900 | 1700 | 2.0GHz | RL=50Ω Pi=-10dBm VR=5V | - | - | 0.8 0.9 | λ=1310nm VR=5V λ=1550nm VR=5V | TO-CAN | ||||
KP-R InGaAs Photodiodes for Receivers | φ0.028 | 900 | 1700 | 14GHz | Pi=-10dBm VR=5V Small signal modulation | - | - | 0.80 0.85 | λ=1310nm VR=5V λ=1550nm VR=5V | CHIP | ||||
Product information
Optical Semiconductor
