InGaAs Photodiodes

KPDB086S-H8

  • Product name
    KPDB086S-H8
  • Characteristics
    • 0.86mm sq. large sensitive area
    • Low dark current
    • Low voltage operation
  • Applications
    • Near infrared sensors
    • Laser diode and LED power monitors
    • Near infrared spectroscopy
    • Power meters
KPDB086S-H8

Specifications

Sensitive size [mm] 0.86x0.86
Sensitive wavelength Min.[nm] 800
Max.[nm] 1700
Bandwidth Typ. 50MHz
Conditions RL=50Ω
VR=2V
Short circuit current Typ.[µA] -
Conditions -
Responsivity Typ.[A/W] 0.45
1.1
Conditions λ=850nm VR=0V
λ=1550nm VR=5V
Package TO-CAN

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Product information

Optical Semiconductor

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