KP-M InGaAs Photodiodes for Monitoring

KPDE008LS-A-RA-HQ

  • Product name
    KPDE008LS-A-RA-HQ
  • Characteristics
    • Small size for high density packaging
    • Low capacitance and high speed with a PIN structure
    • Low dark current
    • High reliability
    • Supports a wide wavelength band (O-, E-, S-, C-, L-Band)
    • Conducted characteristic inspection at high temperature
  • Applications
    • Light monitoring
KPDE008LS-A-RA-HQ

Specifications

Sensitive size [mm] φ0.08
Sensitive wavelength Min.[nm] 900
Max.[nm] 1700
Bandwidth Typ. 2.0GHz
Conditions RL=50Ω Pi=-10dBm VR=5V
Short circuit current Typ.[µA] -
Conditions -
Responsivity Typ.[A/W] 0.8
0.9
Conditions λ=1310nm VR=5V
λ=1550nm VR=5V
Package TO-CAN

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