Thermoelectrically Cooled InGaAs Photodiodes

KPDE086S-H85P

  • Product name
    KPDE086S-H85P
  • Characteristics
    • 860µm sq. large sensitive area
    • Low dark current
    • High shunt resistance
    • Electrically cooled with TEC and thermistor
    • Small size (TO-46 package)
  • Applications
    • Near IR sensors
    • Near IR spectroscopy
    • Power meters
KPDE086S-H85P

Specifications

Sensitive size [mm] 0.86x0.86
Sensitive wavelength Min.[nm] 900
Max.[nm] 1700
Bandwidth Typ. -
Conditions -
Short circuit current Typ.[µA] -
Conditions -
Responsivity Typ.[A/W] 0.9
1.0
Conditions λ=1310nm
λ=1550nm
Package TO-CAN

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Product information

Optical Semiconductor

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