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Sputtering
Sputtering targets for Optical devices
Optical film targets that achieve high productivity and high reliability.
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- Product name
- Silicon carbide (SixC) target
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- Features
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- A high bonding rate with the backing plate ensures stable cooling efficiency.
- When used in reactive sputtering, arcing and cracking are significantly reduced compared to Si targets, ensuring stable use until the end of its life.
Specifications
| Product name | Silicon carbide (SixC) target |
|---|---|
| purity(%) | ≧99 |
| Specific resistance (Ω・cm) | ≦0.1 |
SixC target for SiO2 film deposition
Refractive index of SiO2 film deposited with SixC target
Reference: Film formation rate of SixC target (ULVAC helicon sputtering equipment)
<Comparison of appearance after use of SixC target and Si target>
Target size: 127mm x 686mm x 6mm
caution
Note on the characteristic data given - Data on the characteristics of the products described in this page based on the results of evaluations carried out by the company. This does not guarantee that the characteristics of the product conform with your usage environment. Before use, review the usage conditions based on evaluation data obtained from the equipment and substrates actually used.
Product information
Optical Semiconductor
