Si Phototransistors

KPT081M31

  • Product name
    KPT081M31
  • Characteristics
    • NPN phototransistor
    • Transparent epoxy mold
    • Low leak current
  • Applications
    • Optical switches
    • Optical encoders
    • Photo-isolators
    • Camera stroboscopes
    • Infrared sensors
    • Automatic control apparatus
KPT081M31

Specifications

Sensitive size Typ.[mm2] 0.64×0.64
Sensitive wavelength Min.[nm] 400
Max.[nm] 1000
Photocurrent Typ.[mA] 7
Conditions VCE=5V  100lx(@2856K)
Current amplification factor Typ. 600
Conditions VCE=5V  IC=2mA
Half angle Typ. 60
Package MOLD

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