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KP-2 双波长光电二极管
KPMC29
In order to extend the wavelength range, Si photodiode which has sensitivity to short-wavelength and InGaAs photodiode which has sensitivity to long-wavelength are stacked on the same axis. Also, to make the device more compact, we store InGaAs photodiode to the recess of Si photodiode's substrate. As a result, the height of the package could be as low as possible(China Patented : No. ZL 2019 8 0018416.7) Compared to our earlier models, the volume ratio has been reduced to 1/8.
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- 型号
- KPMC29
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- 概要
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- 广范围检测波长(λ=400~1700nm)
- 可以在同一光轴下进行光学设计
- 小型且低轮廓的转注成型封装, 可承受回流焊
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- 特点
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- Integrated Si and InGaAs photodiode
- Same optical axis configuration
- Wide sensitive wavelength range
- Low dark current
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- 应用
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- 光谱仪
- 辐射温度计
- 医疗设备
- 光纤测试设备
仕様
光接收尺寸 | [mm] | Si □2.2 x 2.2 InGaAs □0.86 x 0.86 |
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检测波长 | Min.[nm] | 400 900 |
Max.[nm] | 1000 1700 |
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带宽 | Typ. | - |
条件 | - | |
短路电流 | Typ.[µA] | - |
条件 | - | |
响应率 | Typ.[A/W] | 0.6 0.9 |
条件 | λ=850nm VR=0V λ=1550nm VR=0V |
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封装 | SMD |